SIHFP360LC MOSFET. Datasheet pdf. Equivalent

   Type Designator: SIHFP360LC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-247AC

SIHFP360LC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SIHFP360LC Datasheet (PDF)

..1. Size:1037K vishay
sihfp360lc.pdf

IRFP360LC, SiHFP360LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 110 Isolated Central Mounting HoleQgs (nC) 28 Dynamic dV/dt RatedQgd (nC) 45 Repetitive A

..2. Size:1031K vishay
irfp360lc sihfp360lc.pdf

6.1. Size:1001K vishay
sihfp360.pdf

IRFP360, SiHFP360Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30 Ease of ParallelingQgd (nC) 110Configuration Single Simple Drive Requirements Complia

6.2. Size:995K vishay
irfp360 sihfp360.pdf