IRLBA1304 Specs and Replacement

Type Designator: IRLBA1304

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 185 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 350 nS

Cossⓘ - Output Capacitance: 2150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: SUPER220

IRLBA1304 substitution

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IRLBA1304 datasheet

 ..1. Size:95K  international rectifier
 irlba1304.pdf pdf_icon

IRLBA1304

PD- 91842 IRLBA1304/P HEXFET Power MOSFET Logic-Level Gate Drive D VDSS = 40V Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ. RDS(on) = 0.004 application conditions vs. TO-220 G Fully Avalanche Rated ID = 185A S Description The HEXFET is the most popular power MOSFET in the world. This particular HEXFET is in the Super220TM and has the ... See More ⇒

 9.1. Size:121K  international rectifier
 irlba3803.pdf pdf_icon

IRLBA1304

PD - 91841A IRLBA3803/P HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 30V 175 C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 0.005 G Description Fifth Generation HEXFETs from International Rectifier utilize ID = 179AV advanced processing techniques to achieve extremely low S on-resistance per silicon area. This ... See More ⇒

Detailed specifications: IRL630, IRL630A, IRL630S, IRL631, IRL640, IRL640A, IRL640S, IRL641, IRLB3034, IRLBA1304P, IRLBA3803, IRLBA3803P, 7N65L-TF3-T, IRLBL1304, IRLD014, IRLD024, IRLD110

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