IRLBA1304 Datasheet and Replacement
Type Designator: IRLBA1304
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id|ⓘ - Maximum Drain Current: 185 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 350 nS
Cossⓘ - Output Capacitance: 2150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SUPER220
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IRLBA1304 Datasheet (PDF)
irlba1304.pdf

PD- 91842IRLBA1304/PHEXFET Power MOSFET Logic-Level Gate DriveDVDSS = 40V Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ.RDS(on) = 0.004application conditions vs. TO-220G Fully Avalanche RatedID = 185A SDescriptionThe HEXFET is the most popular power MOSFET in the world.This particular HEXFET is in the Super220TM and has the
irlba3803.pdf

PD - 91841AIRLBA3803/PHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 30V 175C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 0.005GDescriptionFifth Generation HEXFETs from International Rectifier utilize ID = 179AVadvanced processing techniques to achieve extremely lowSon-resistance per silicon area. This
Datasheet: IRL630 , IRL630A , IRL630S , IRL631 , IRL640 , IRL640A , IRL640S , IRL641 , IRF520 , IRLBA1304P , IRLBA3803 , IRLBA3803P , 7N65L-TF3-T , IRLBL1304 , IRLD014 , IRLD024 , IRLD110 .
History: IPB65R045C7 | TPC8034-H | A9451 | HM60N04 | STK0760P | MXP65D7AT | IPB65R310CFD
Keywords - IRLBA1304 MOSFET datasheet
IRLBA1304 cross reference
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History: IPB65R045C7 | TPC8034-H | A9451 | HM60N04 | STK0760P | MXP65D7AT | IPB65R310CFD



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