IRLBA1304P PDF Specs and Replacement
Type Designator: IRLBA1304P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 185 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 350 nS
Cossⓘ - Output Capacitance: 2150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SUPER220
IRLBA1304P substitution
IRLBA1304P PDF Specs
irlba1304.pdf
PD- 91842 IRLBA1304/P HEXFET Power MOSFET Logic-Level Gate Drive D VDSS = 40V Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ. RDS(on) = 0.004 application conditions vs. TO-220 G Fully Avalanche Rated ID = 185A S Description The HEXFET is the most popular power MOSFET in the world. This particular HEXFET is in the Super220TM and has the ... See More ⇒
irlba3803.pdf
PD - 91841A IRLBA3803/P HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 30V 175 C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 0.005 G Description Fifth Generation HEXFETs from International Rectifier utilize ID = 179AV advanced processing techniques to achieve extremely low S on-resistance per silicon area. This ... See More ⇒
Detailed specifications: IRL630A , IRL630S , IRL631 , IRL640 , IRL640A , IRL640S , IRL641 , IRLBA1304 , IRF9640 , IRLBA3803 , IRLBA3803P , 7N65L-TF3-T , IRLBL1304 , IRLD014 , IRLD024 , IRLD110 , IRLD120 .
Keywords - IRLBA1304P MOSFET specs
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IRLBA1304P substitution
IRLBA1304P replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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MOSFET: AP3N50K | AP3N50F | AP3912GD
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