All MOSFET. IRLBA1304P Datasheet

 

IRLBA1304P Datasheet and Replacement


   Type Designator: IRLBA1304P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min) V
   |Id| ⓘ - Maximum Drain Current: 185 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 140(max) nC
   tr ⓘ - Rise Time: 350 nS
   Cossⓘ - Output Capacitance: 2150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: SUPER220
 

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IRLBA1304P Datasheet (PDF)

 5.1. Size:95K  international rectifier
 irlba1304.pdf pdf_icon

IRLBA1304P

PD- 91842IRLBA1304/PHEXFET Power MOSFET Logic-Level Gate DriveDVDSS = 40V Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ.RDS(on) = 0.004application conditions vs. TO-220G Fully Avalanche RatedID = 185A SDescriptionThe HEXFET is the most popular power MOSFET in the world.This particular HEXFET is in the Super220TM and has the

 9.1. Size:121K  international rectifier
 irlba3803.pdf pdf_icon

IRLBA1304P

PD - 91841AIRLBA3803/PHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 30V 175C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 0.005GDescriptionFifth Generation HEXFETs from International Rectifier utilize ID = 179AVadvanced processing techniques to achieve extremely lowSon-resistance per silicon area. This

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