All MOSFET. SIHFR120 Datasheet

 

SIHFR120 Datasheet and Replacement


   Type Designator: SIHFR120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO-252
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SIHFR120 Datasheet (PDF)

 ..1. Size:2013K  vishay
 irfr120pbf irfu120pbf sihfr120 sihfu120.pdf pdf_icon

SIHFR120

IRFR120, IRFU120, SiHFR120, SiHFU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.27 Repetitive Avalanche RatedQg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120)Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and ReelQ

 ..2. Size:1989K  vishay
 irfr120 irfu120 sihfr120 sihfu120.pdf pdf_icon

SIHFR120

IRFR120, IRFU120, SiHFR120, SiHFU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.27 Repetitive Avalanche RatedQg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120)Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and ReelQ

 8.1. Size:1455K  vishay
 irfr110 sihfr110.pdf pdf_icon

SIHFR120

IRFR110, SiHFR110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110)Qgs (nC) 2.3 Available in Tape and ReelQgd (nC) 3.8 Fast SwitchingConfiguration Single

 8.2. Size:244K  vishay
 irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf pdf_icon

SIHFR120

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing

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History: NVTA7002N | UPA1720 | IRF630M | MDD7N25RH | IPP048N04NG

Keywords - SIHFR120 MOSFET datasheet

 SIHFR120 cross reference
 SIHFR120 equivalent finder
 SIHFR120 lookup
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