SIHFR120 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SIHFR120
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.7 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 150 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
Тип корпуса: TO-252
- подбор MOSFET транзистора по параметрам
SIHFR120 Datasheet (PDF)
irfr120pbf irfu120pbf sihfr120 sihfu120.pdf

IRFR120, IRFU120, SiHFR120, SiHFU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.27 Repetitive Avalanche RatedQg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120)Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and ReelQ
irfr120 irfu120 sihfr120 sihfu120.pdf

IRFR120, IRFU120, SiHFR120, SiHFU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.27 Repetitive Avalanche RatedQg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120)Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and ReelQ
irfr110 sihfr110.pdf

IRFR110, SiHFR110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110)Qgs (nC) 2.3 Available in Tape and ReelQgd (nC) 3.8 Fast SwitchingConfiguration Single
irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing
Другие MOSFET... SIHFPS40N50L , SIHFPS40N60K , SIHFPS43N50K , SIHFR010 , SIHFR014 , SIHFR020 , SIHFR024 , SIHFR110 , MMIS60R580P , SIHFR1N60A , SIHFR210 , SIHFR214 , SIHFR220 , SIHFR224 , SIHFR310 , SIHFR320 , SIHFR420 .
History: NTB004N10G | RU1HL8L | IXTH10N60 | TSM4946DCS | UPA1770 | KRF7703 | BSS306N
History: NTB004N10G | RU1HL8L | IXTH10N60 | TSM4946DCS | UPA1770 | KRF7703 | BSS306N



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