IRLBA3803P Datasheet. Specs and Replacement

Type Designator: IRLBA3803P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 179 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 230 nS

Cossⓘ - Output Capacitance: 1800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: SUPER220

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IRLBA3803P datasheet

 5.1. Size:121K  international rectifier
 irlba3803.pdf pdf_icon

IRLBA3803P

PD - 91841A IRLBA3803/P HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 30V 175 C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 0.005 G Description Fifth Generation HEXFETs from International Rectifier utilize ID = 179AV advanced processing techniques to achieve extremely low S on-resistance per silicon area. This ... See More ⇒

 9.1. Size:95K  international rectifier
 irlba1304.pdf pdf_icon

IRLBA3803P

PD- 91842 IRLBA1304/P HEXFET Power MOSFET Logic-Level Gate Drive D VDSS = 40V Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ. RDS(on) = 0.004 application conditions vs. TO-220 G Fully Avalanche Rated ID = 185A S Description The HEXFET is the most popular power MOSFET in the world. This particular HEXFET is in the Super220TM and has the ... See More ⇒

Detailed specifications: IRL631, IRL640, IRL640A, IRL640S, IRL641, IRLBA1304, IRLBA1304P, IRLBA3803, IRF520, 7N65L-TF3-T, IRLBL1304, IRLD014, IRLD024, IRLD110, IRLD120, IRLI2203N, IRLI2505

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