All MOSFET. IRLBA3803P Datasheet

 

IRLBA3803P Datasheet and Replacement


   Type Designator: IRLBA3803P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 179 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 230 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: SUPER220
 

 IRLBA3803P substitution

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IRLBA3803P Datasheet (PDF)

 5.1. Size:121K  international rectifier
 irlba3803.pdf pdf_icon

IRLBA3803P

PD - 91841AIRLBA3803/PHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 30V 175C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 0.005GDescriptionFifth Generation HEXFETs from International Rectifier utilize ID = 179AVadvanced processing techniques to achieve extremely lowSon-resistance per silicon area. This

 9.1. Size:95K  international rectifier
 irlba1304.pdf pdf_icon

IRLBA3803P

PD- 91842IRLBA1304/PHEXFET Power MOSFET Logic-Level Gate DriveDVDSS = 40V Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ.RDS(on) = 0.004application conditions vs. TO-220G Fully Avalanche RatedID = 185A SDescriptionThe HEXFET is the most popular power MOSFET in the world.This particular HEXFET is in the Super220TM and has the

Datasheet: IRL631 , IRL640 , IRL640A , IRL640S , IRL641 , IRLBA1304 , IRLBA1304P , IRLBA3803 , HY1906P , 7N65L-TF3-T , IRLBL1304 , IRLD014 , IRLD024 , IRLD110 , IRLD120 , IRLI2203N , IRLI2505 .

History: RJK2017DPP | IRF635

Keywords - IRLBA3803P MOSFET datasheet

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