IRLD014 Datasheet and Replacement
Type Designator: IRLD014
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: HD-1
IRLD014 substitution
IRLD014 Datasheet (PDF)
irld014pbf.pdf
PD-95978IRLD014PbF Lead-Free12/20/04Document Number: 91307 www.vishay.com1IRLD014PbFDocument Number: 91307 www.vishay.com2IRLD014PbFDocument Number: 91307 www.vishay.com3IRLD014PbFDocument Number: 91307 www.vishay.com4IRLD014PbFDocument Number: 91307 www.vishay.com5IRLD014PbFDocument Number: 91307 www.vishay.com6IRLD014PbFPeak Diode Recovery
irld014 sihld014.pdf
IRLD014, SiHLD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5 V 0.20RoHS* End StackableQg (Max.) (nC) 8.4 COMPLIANT Logic-Level Gate DriveQgs (nC) 2.6Qgd (nC) 6.4 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature
irld014pbf sihld014.pdf
IRLD014, SiHLD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5 V 0.20RoHS* End StackableQg (Max.) (nC) 8.4 COMPLIANT Logic-Level Gate DriveQgs (nC) 2.6Qgd (nC) 6.4 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature
Datasheet: IRL640S , IRL641 , IRLBA1304 , IRLBA1304P , IRLBA3803 , IRLBA3803P , 7N65L-TF3-T , IRLBL1304 , AON7403 , IRLD024 , IRLD110 , IRLD120 , IRLI2203N , IRLI2505 , IRLI2910 , IRLI3705N , IRLI3803 .
History: ELM34421AA
Keywords - IRLD014 MOSFET datasheet
IRLD014 cross reference
IRLD014 equivalent finder
IRLD014 lookup
IRLD014 substitution
IRLD014 replacement
History: ELM34421AA
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