All MOSFET. IRLD024 Datasheet

 

IRLD024 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLD024
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 18(max) nC
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: HD-1

 IRLD024 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLD024 Datasheet (PDF)

 ..1. Size:170K  international rectifier
 irld024.pdf

IRLD024 IRLD024

 ..2. Size:1763K  international rectifier
 irld024pbf.pdf

IRLD024 IRLD024

PD- 95981IRLD024PbF Lead-Free12/21/04Document Number: 91308 www.vishay.com1IRLD024PbFDocument Number: 91308 www.vishay.com2IRLD024PbFDocument Number: 91308 www.vishay.com3IRLD024PbFDocument Number: 91308 www.vishay.com4IRLD024PbFDocument Number: 91308 www.vishay.com5IRLD024PbFDocument Number: 91308 www.vishay.com6IRLD024PbFPeak Diode Recovery

 ..3. Size:1692K  vishay
 irld024 sihld024.pdf

IRLD024 IRLD024

IRLD024, SiHLD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5.0 V 0.10RoHS* End StackableQg (Max.) (nC) 18COMPLIANT Logic-Level Gate DriveQgs (nC) 4.5Qgd (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature

 9.1. Size:172K  international rectifier
 irld014.pdf

IRLD024 IRLD024

 9.2. Size:1789K  international rectifier
 irld014pbf.pdf

IRLD024 IRLD024

PD-95978IRLD014PbF Lead-Free12/20/04Document Number: 91307 www.vishay.com1IRLD014PbFDocument Number: 91307 www.vishay.com2IRLD014PbFDocument Number: 91307 www.vishay.com3IRLD014PbFDocument Number: 91307 www.vishay.com4IRLD014PbFDocument Number: 91307 www.vishay.com5IRLD014PbFDocument Number: 91307 www.vishay.com6IRLD014PbFPeak Diode Recovery

 9.3. Size:1724K  vishay
 irld014 sihld014.pdf

IRLD024 IRLD024

IRLD014, SiHLD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5 V 0.20RoHS* End StackableQg (Max.) (nC) 8.4 COMPLIANT Logic-Level Gate DriveQgs (nC) 2.6Qgd (nC) 6.4 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature

 9.4. Size:1725K  vishay
 irld014pbf sihld014.pdf

IRLD024 IRLD024

IRLD014, SiHLD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5 V 0.20RoHS* End StackableQg (Max.) (nC) 8.4 COMPLIANT Logic-Level Gate DriveQgs (nC) 2.6Qgd (nC) 6.4 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature

Datasheet: IRL641 , IRLBA1304 , IRLBA1304P , IRLBA3803 , IRLBA3803P , 7N65L-TF3-T , IRLBL1304 , IRLD014 , MDF11N65B , IRLD110 , IRLD120 , IRLI2203N , IRLI2505 , IRLI2910 , IRLI3705N , IRLI3803 , IRLI510A .

 

 
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