IRLD110 Datasheet and Replacement
Type Designator: IRLD110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 6.1(max) nC
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: HD-1
IRLD110 substitution
IRLD110 Datasheet (PDF)
irld110pbf.pdf

PD-95980IRLD110PbF Lead-Free12/20/04Document Number: 91309 www.vishay.com1IRLD110PbFDocument Number: 91309 www.vishay.com2IRLD110PbFDocument Number: 91309 www.vishay.com3IRLD110PbFDocument Number: 91309 www.vishay.com4IRLD110PbFDocument Number: 91309 www.vishay.com5IRLD110PbFDocument Number: 91309 www.vishay.com6IRLD110PbFPeak Diode Recovery
irld110 sihld110.pdf

IRLD110, SiHLD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 6.1COMPLIANT End StackableQgs (nC) 2.6Qgd (nC) 3.3 Logic-Level Gate DriveConfiguration Single RDS(on) Specified at VGS = 4 V and 5 V
irld120pbf.pdf

PD-95979IRLD120PbF Lead-Free12/20/04Document Number: 91310 www.vishay.com1IRLD120PbFDocument Number: 91310 www.vishay.com2IRLD120PbFDocument Number: 91310 www.vishay.com3IRLD120PbFDocument Number: 91310 www.vishay.com4IRLD120PbFDocument Number: 91310 www.vishay.com5IRLD120PbFDocument Number: 91310 www.vishay.com6IRLD120PbFPeak Diode Recovery
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Keywords - IRLD110 MOSFET datasheet
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