All MOSFET. SIHG64N65E Datasheet

 

SIHG64N65E Datasheet and Replacement


   Type Designator: SIHG64N65E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 64 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 122 nS
   Cossⓘ - Output Capacitance: 366 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: TO-247AC
      - MOSFET Cross-Reference Search

 

SIHG64N65E Datasheet (PDF)

 ..1. Size:147K  vishay
 sihg64n65e.pdf pdf_icon

SIHG64N65E

SiHG64N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.047 Reduced switching and conduction lossesQg max. (nC) 369 Ultra low gate charge (Qg)Qgs (nC) 66Qgd (nC) 93 Avalanche energy rated (UIS)Co

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SPD04N60S5 | SM6A12NSFP | FCPF7N60YDTU

Keywords - SIHG64N65E MOSFET datasheet

 SIHG64N65E cross reference
 SIHG64N65E equivalent finder
 SIHG64N65E lookup
 SIHG64N65E substitution
 SIHG64N65E replacement

 

 
Back to Top

 


 
.