All MOSFET. SIHG64N65E Datasheet

 

SIHG64N65E MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHG64N65E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 64 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 239 nC
   trⓘ - Rise Time: 122 nS
   Cossⓘ - Output Capacitance: 366 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: TO-247AC

 SIHG64N65E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHG64N65E Datasheet (PDF)

 ..1. Size:147K  vishay
 sihg64n65e.pdf

SIHG64N65E SIHG64N65E

SiHG64N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.047 Reduced switching and conduction lossesQg max. (nC) 369 Ultra low gate charge (Qg)Qgs (nC) 66Qgd (nC) 93 Avalanche energy rated (UIS)Co

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