All MOSFET. SIHG64N65E Datasheet

 

SIHG64N65E Datasheet and Replacement


   Type Designator: SIHG64N65E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 122 nS
   Cossⓘ - Output Capacitance: 366 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: TO-247AC
 

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SIHG64N65E Datasheet (PDF)

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SIHG64N65E

SiHG64N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.047 Reduced switching and conduction lossesQg max. (nC) 369 Ultra low gate charge (Qg)Qgs (nC) 66Qgd (nC) 93 Avalanche energy rated (UIS)Co

Datasheet: SIHG32N50D , SIHG33N60E , SIHG33N60EF , SIHG460B , SIHG47N60E , SIHG47N60EF , SIHG47N60S , SIHG47N65E , IRF830 , SIHG73N60E , SIHH11N60E , SIHH14N60E , SIHH21N60E , SIHH26N60E , SIHL510 , SIHL510S , SIHL520 .

History: WMM25N65EM

Keywords - SIHG64N65E MOSFET datasheet

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