SIHG64N65E Specs and Replacement
Type Designator: SIHG64N65E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 64 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 122 nS
Cossⓘ - Output Capacitance: 366 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: TO-247AC
SIHG64N65E substitution
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SIHG64N65E datasheet
sihg64n65e.pdf
SiHG64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.047 Reduced switching and conduction losses Qg max. (nC) 369 Ultra low gate charge (Qg) Qgs (nC) 66 Qgd (nC) 93 Avalanche energy rated (UIS) Co... See More ⇒
Detailed specifications: SIHG32N50D, SIHG33N60E, SIHG33N60EF, SIHG460B, SIHG47N60E, SIHG47N60EF, SIHG47N60S, SIHG47N65E, 2N60, SIHG73N60E, SIHH11N60E, SIHH14N60E, SIHH21N60E, SIHH26N60E, SIHL510, SIHL510S, SIHL520
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