SIHH11N60E MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHH11N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 56 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.339 Ohm
Package: POWERPAK8X8
SIHH11N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHH11N60E Datasheet (PDF)
sihh11n60e.pdf
SiHH11N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.295 Low input capacitance (Ciss)Qg max. (nC) 62 Reduced switching and conduction lossesQgs (nC) 7Qgd (nC) 13 Ultra low gate charge (Qg)Confi
sihh180n60e.pdf
SiHH180N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPin 4: drain 4th generation E series technologyPowerPAK 8 x 8 Low figure-of-merit (FOM) Ron x QgPin 1: Low effective capacitance (Co(er))gate4 Reduced switching and conduction losses1 Avalanche energy rated (UIS)Pin 2:2 Kelvin connection Kelvin connection for reduced gate
sihh14n60e.pdf
SiHH14N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.220 Low input capacitance (Ciss)Qg max. (nC) 82 Reduced switching and conduction lossesQgs (nC) 8Qgd (nC) 16 Ultra low gate charge (Qg)Confi
Datasheet: SIHG33N60EF , SIHG460B , SIHG47N60E , SIHG47N60EF , SIHG47N60S , SIHG47N65E , SIHG64N65E , SIHG73N60E , 2SK3561 , SIHH14N60E , SIHH21N60E , SIHH26N60E , SIHL510 , SIHL510S , SIHL520 , SIHL520L , SIHL530 .
