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SIHS20N50C PDF Specs and Replacement


   Type Designator: SIHS20N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: SUPER-247
 

 SIHS20N50C substitution

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SIHS20N50C PDF Specs

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SIHS20N50C

SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 100 % Avalanche Tested RDS(on) ( )VGS = 10 V 0.270 High Peak Current Capability Qg (Max.) (nC) 76 dV/dt Ruggedness Qgs (nC) 21 Improved trr/Qrr Qgd (nC) 34 Improved Gate Charge Configuration Single High Power Dissipations Capability... See More ⇒

Detailed specifications: SIHP30N60E , SIHP33N60E , SIHP33N60EF , SIHP5N50D , SIHP6N40D , SIHP6N65E , SIHP7N60E , SIHP8N50D , AO4407 , SIHS36N50D , SIHU3N50D , SIHU3N50DA , SIHU5N50D , SIHU6N62E , SIHU6N65E , SIHU7N60E , SIHW30N60E .

History: SIHP5N50D

Keywords - SIHS20N50C MOSFET specs

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