SIHS20N50C Datasheet. Specs and Replacement

Type Designator: SIHS20N50C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 65 nC

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: SUPER-247

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SIHS20N50C datasheet

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SIHS20N50C

SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 100 % Avalanche Tested RDS(on) ( )VGS = 10 V 0.270 High Peak Current Capability Qg (Max.) (nC) 76 dV/dt Ruggedness Qgs (nC) 21 Improved trr/Qrr Qgd (nC) 34 Improved Gate Charge Configuration Single High Power Dissipations Capability... See More ⇒

Detailed specifications: SIHP30N60E, SIHP33N60E, SIHP33N60EF, SIHP5N50D, SIHP6N40D, SIHP6N65E, SIHP7N60E, SIHP8N50D, AO4407, SIHS36N50D, SIHU3N50D, SIHU3N50DA, SIHU5N50D, SIHU6N62E, SIHU6N65E, SIHU7N60E, SIHW30N60E

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