All MOSFET. SIHS20N50C Datasheet

 

SIHS20N50C MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHS20N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: SUPER-247

 SIHS20N50C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHS20N50C Datasheet (PDF)

 ..1. Size:145K  vishay
 sihs20n50c.pdf

SIHS20N50C SIHS20N50C

SiHS20N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 100 % Avalanche TestedRDS(on) ()VGS = 10 V 0.270 High Peak Current CapabilityQg (Max.) (nC) 76 dV/dt RuggednessQgs (nC) 21 Improved trr/QrrQgd (nC) 34 Improved Gate ChargeConfiguration Single High Power Dissipations Capability

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