SIHS36N50D MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHS36N50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 446 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 83 nC
trⓘ - Rise Time: 89 nS
Cossⓘ - Output Capacitance: 285 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SUPER-247
SIHS36N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHS36N50D Datasheet (PDF)
..1. Size:168K vishay
sihs36n50d.pdf
sihs36n50d.pdf
SiHS36N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.130- Low Input Capacitance (Ciss)Qg max. (nC) 125- Reduced Capacitive Switching LossesQgs (nC) 23- High Body Diode RuggednessQgd (nC) 37- Avalanche Energy Rated (UIS)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
