All MOSFET. SIHS36N50D Datasheet

 

SIHS36N50D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHS36N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 83 nC
   trⓘ - Rise Time: 89 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SUPER-247

 SIHS36N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHS36N50D Datasheet (PDF)

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 sihs36n50d.pdf

SIHS36N50D SIHS36N50D

SiHS36N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.130- Low Input Capacitance (Ciss)Qg max. (nC) 125- Reduced Capacitive Switching LossesQgs (nC) 23- High Body Diode RuggednessQgd (nC) 37- Avalanche Energy Rated (UIS)

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