SIHS36N50D Specs and Replacement

Type Designator: SIHS36N50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 446 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 89 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SUPER-247

SIHS36N50D substitution

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SIHS36N50D datasheet

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SIHS36N50D

SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.130 - Low Input Capacitance (Ciss) Qg max. (nC) 125 - Reduced Capacitive Switching Losses Qgs (nC) 23 - High Body Diode Ruggedness Qgd (nC) 37 - Avalanche Energy Rated (UIS)... See More ⇒

Detailed specifications: SIHP33N60E, SIHP33N60EF, SIHP5N50D, SIHP6N40D, SIHP6N65E, SIHP7N60E, SIHP8N50D, SIHS20N50C, BS170, SIHU3N50D, SIHU3N50DA, SIHU5N50D, SIHU6N62E, SIHU6N65E, SIHU7N60E, SIHW30N60E, SIHW33N60E

Keywords - SIHS36N50D MOSFET specs

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