SIHU3N50D MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHU3N50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
Package: TO-251
SIHU3N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHU3N50D Datasheet (PDF)
sihu3n50d.pdf
SiHU3N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. () at 25 C VGS = 10 V 3.2- Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 5 - Avalanche Energy Rated (UIS)
sihu3n50da.pdf
SiHU3N50DAwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal designVDS (V) at TJ max. 550- Low area specific on-resistanceRDS(on) max. at 25 C () VGS = 10 V 3.2- Low input capacitance (Ciss)Qg (max.) (nC) 12- Reduced capacitive switching lossesQgs (nC) 2- High body diode ruggednessQgd (nC) 3- Avalanche energy rated (UIS)Co
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