SIHU3N50DA MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHU3N50DA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 26 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
Package: TO-251
SIHU3N50DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHU3N50DA Datasheet (PDF)
sihu3n50da.pdf
SiHU3N50DAwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal designVDS (V) at TJ max. 550- Low area specific on-resistanceRDS(on) max. at 25 C () VGS = 10 V 3.2- Low input capacitance (Ciss)Qg (max.) (nC) 12- Reduced capacitive switching lossesQgs (nC) 2- High body diode ruggednessQgd (nC) 3- Avalanche energy rated (UIS)Co
sihu3n50d.pdf
SiHU3N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. () at 25 C VGS = 10 V 3.2- Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 5 - Avalanche Energy Rated (UIS)
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
