All MOSFET. SIHW33N60E Datasheet

 

SIHW33N60E MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHW33N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO-247AD

 SIHW33N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHW33N60E Datasheet (PDF)

 ..1. Size:145K  vishay
 sihw33n60e.pdf

SIHW33N60E SIHW33N60E

SiHW33N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM): Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.099 Reducted Switching and Conduction LossesQg (Max.) (nC) 150 Ultra Low Gate Charge (Qg)Qgs (nC) 24Qgd (nC) 42 Avalanche Energy Rated (UIS

 9.1. Size:130K  vishay
 sihw30n60e.pdf

SIHW33N60E SIHW33N60E

SiHW30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced Switching and Conduction LossesQg max. (nC) 130 Ultra Low Gate Charge (Qg)Qgs (nC) 15 Avalanche Energy Rated (UIS)Qgd (nC) 39

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPB054N06N3

 

 
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