SIHW33N60E Specs and Replacement
Type Designator: SIHW33N60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 156 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO-247AD
SIHW33N60E substitution
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SIHW33N60E datasheet
sihw33n60e.pdf
SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.099 Reducted Switching and Conduction Losses Qg (Max.) (nC) 150 Ultra Low Gate Charge (Qg) Qgs (nC) 24 Qgd (nC) 42 Avalanche Energy Rated (UIS... See More ⇒
Detailed specifications: SIHS36N50D, SIHU3N50D, SIHU3N50DA, SIHU5N50D, SIHU6N62E, SIHU6N65E, SIHU7N60E, SIHW30N60E, SI2302, SIHW47N60E, SIHW73N60E, FMA49N20T2, FMB16N50E, FMB80N10T2, FMC03N60E, FMC05N50E, FMC05N60E
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