All MOSFET. SIHW73N60E Datasheet

 

SIHW73N60E MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHW73N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 73 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 241 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO-247AD

 SIHW73N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHW73N60E Datasheet (PDF)

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 sihw73n60e.pdf

SIHW73N60E SIHW73N60E

SiHW73N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.039 Reduced switching and conduction lossesQg max. (nC) 362 Ultra low gate charge (Qg)Qgs (nC) 48 Avalanche energy rated (UIS)Qgd (nC) 98Co

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