SIHW73N60E Datasheet and Replacement
Type Designator: SIHW73N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 73 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO-247AD
SIHW73N60E substitution
SIHW73N60E Datasheet (PDF)
sihw73n60e.pdf
SiHW73N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.039 Reduced switching and conduction lossesQg max. (nC) 362 Ultra low gate charge (Qg)Qgs (nC) 48 Avalanche energy rated (UIS)Qgd (nC) 98Co
Datasheet: SIHU3N50DA , SIHU5N50D , SIHU6N62E , SIHU6N65E , SIHU7N60E , SIHW30N60E , SIHW33N60E , SIHW47N60E , 18N50 , FMA49N20T2 , FMB16N50E , FMB80N10T2 , FMC03N60E , FMC05N50E , FMC05N60E , FMC06N60ES , FMC07N50E .
History: SIHW33N60E | 22N65 | SIHW47N60E | WML22N50C4
Keywords - SIHW73N60E MOSFET datasheet
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SIHW73N60E replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SIHW33N60E | 22N65 | SIHW47N60E | WML22N50C4
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