All MOSFET. FMA49N20T2 Datasheet

 

FMA49N20T2 Datasheet and Replacement


   Type Designator: FMA49N20T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 49 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: TO-220F
 

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FMA49N20T2 Datasheet (PDF)

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FMA49N20T2

SPECIFICATIONDevice Name : Power MOSFETType Name : FMA49N20T2Spec. No. :MS5F6123Date :Jun.-17-2005NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWN Jun.-17-'05aCHECKED Jun.-17-'05MS5F6123 1 / 19CHECKED Jun.-17-'05H04-004-05This m aterial and the inform ation herein is the p roperty of Fuji ElectricDevice Technology Co.,Ltd. They s hall be neither r

Datasheet: SIHU5N50D , SIHU6N62E , SIHU6N65E , SIHU7N60E , SIHW30N60E , SIHW33N60E , SIHW47N60E , SIHW73N60E , IRF530 , FMB16N50E , FMB80N10T2 , FMC03N60E , FMC05N50E , FMC05N60E , FMC06N60ES , FMC07N50E , FMC10N60E .

History: PSMN3R5-40YSD

Keywords - FMA49N20T2 MOSFET datasheet

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