FMA49N20T2 Specs and Replacement

Type Designator: FMA49N20T2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 97 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 49 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm

Package: TO-220F

FMA49N20T2 substitution

- MOSFET ⓘ Cross-Reference Search

 

FMA49N20T2 datasheet

 ..1. Size:351K  fuji
fma49n20t2.pdf pdf_icon

FMA49N20T2

SPECIFICATION Device Name Power MOSFET Type Name FMA49N20T2 Spec. No. MS5F6123 Date Jun.-17-2005 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Jun.-17-'05 a CHECKED Jun.-17-'05 MS5F6123 1 / 19 CHECKED Jun.-17-'05 H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither r... See More ⇒

Detailed specifications: SIHU5N50D, SIHU6N62E, SIHU6N65E, SIHU7N60E, SIHW30N60E, SIHW33N60E, SIHW47N60E, SIHW73N60E, 20N50, FMB16N50E, FMB80N10T2, FMC03N60E, FMC05N50E, FMC05N60E, FMC06N60ES, FMC07N50E, FMC10N60E

Keywords - FMA49N20T2 MOSFET specs

 FMA49N20T2 cross reference

 FMA49N20T2 equivalent finder

 FMA49N20T2 pdf lookup

 FMA49N20T2 substitution

 FMA49N20T2 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs