FMA49N20T2 Specs and Replacement
Type Designator: FMA49N20T2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 49 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 440 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: TO-220F
FMA49N20T2 substitution
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FMA49N20T2 datasheet
fma49n20t2.pdf
SPECIFICATION Device Name Power MOSFET Type Name FMA49N20T2 Spec. No. MS5F6123 Date Jun.-17-2005 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Jun.-17-'05 a CHECKED Jun.-17-'05 MS5F6123 1 / 19 CHECKED Jun.-17-'05 H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither r... See More ⇒
Detailed specifications: SIHU5N50D, SIHU6N62E, SIHU6N65E, SIHU7N60E, SIHW30N60E, SIHW33N60E, SIHW47N60E, SIHW73N60E, 20N50, FMB16N50E, FMB80N10T2, FMC03N60E, FMC05N50E, FMC05N60E, FMC06N60ES, FMC07N50E, FMC10N60E
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