All MOSFET. FMB16N50E Datasheet

 

FMB16N50E Datasheet and Replacement


   Type Designator: FMB16N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 60 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: T-PACK-SJ
 

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FMB16N50E Datasheet (PDF)

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FMB16N50E

SPECIFICATIONDevice Name : Power MOSFETFMI16N50E (T-pack L)FMC16N50E (T-pack S)Type Name : FMB16N50E (T-pack SJ)Spec. No. : MS5F6867Date :July.-19-2007Fuji Electric Device Technology Co.,Ltd.NAMEDATE APPROVEDFuji Electric Device Technology Co., Ltd.DRAWN July.-19-'07CHECKED July.-19-'07MS5F6867 1 / 18CHECKED July.-19-'07H04-004-05This m aterial and the inform a

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Keywords - FMB16N50E MOSFET datasheet

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