FMB16N50E Specs and Replacement
Type Designator: FMB16N50E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: T-PACK-SJ
FMB16N50E substitution
- MOSFET ⓘ Cross-Reference Search
FMB16N50E datasheet
fmb16n50e.pdf
SPECIFICATION Device Name Power MOSFET FMI16N50E (T-pack L) FMC16N50E (T-pack S) Type Name FMB16N50E (T-pack SJ) Spec. No. MS5F6867 Date July.-19-2007 Fuji Electric Device Technology Co.,Ltd. NAME DATE APPROVED Fuji Electric Device Technology Co., Ltd. DRAWN July.-19-'07 CHECKED July.-19-'07 MS5F6867 1 / 18 CHECKED July.-19-'07 H04-004-05 This m aterial and the inform a... See More ⇒
Detailed specifications: SIHU6N62E, SIHU6N65E, SIHU7N60E, SIHW30N60E, SIHW33N60E, SIHW47N60E, SIHW73N60E, FMA49N20T2, IRF520, FMB80N10T2, FMC03N60E, FMC05N50E, FMC05N60E, FMC06N60ES, FMC07N50E, FMC10N60E, FMC11N60E
Keywords - FMB16N50E MOSFET specs
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