FMC10N60E Specs and Replacement
Type Designator: FMC10N60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
Qg ⓘ - Total Gate Charge: 47 nC
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.79 Ohm
Package: T-PACK-S
FMC10N60E substitution
- MOSFET ⓘ Cross-Reference Search
FMC10N60E datasheet
fmc10n60e.pdf
FMC10N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒
Detailed specifications: FMA49N20T2, FMB16N50E, FMB80N10T2, FMC03N60E, FMC05N50E, FMC05N60E, FMC06N60ES, FMC07N50E, 75N75, FMC11N60E, FMC12N50E, FMC12N50ES, FMC12N60ES, FMC13N60E, FMC13N60ES, FMC16N50E, FMC16N50ES
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