FMC80N10T2 Datasheet and Replacement
Type Designator: FMC80N10T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 740 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0128 Ohm
Package: T-PACK-S
FMC80N10T2 substitution
FMC80N10T2 Datasheet (PDF)
fmb80n10t2 fmc80n10t2 fmi80n10t2.pdf

SPECIFICATIONDevice Name : Power MOSFETFMI80N10T2 (T-pack L)FMC80N10T2 (T-pack S)Type Name:FMB80N10T2 (T-pack SJ)Spec. No. :MS5F6118Date : Jun.-17-2005NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWN Jun.-17-'05aCHECKED Jun.-17-'05bMS5F6118 1 / 22CHECKED Jun.-17-'05H04-004-05This m aterial and the inform ation herein is the p roperty of Fuji E
Datasheet: FMC13N60E , FMC13N60ES , FMC16N50E , FMC16N50ES , FMC16N60E , FMC16N60ES , FMC20N50E , FMC20N50ES , IRF9640 , FMH06N80E , FMH06N90E , FMH07N90E , FMH09N90E , FMH11N90E , FMH13N60ES , FMH16N50E , FMH16N50ES .
History: AFP9576 | R6020FNX | WMQ25P06TS | NP50P03YDG | IRLR120PBF | STB20NM60D | ME7170
Keywords - FMC80N10T2 MOSFET datasheet
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History: AFP9576 | R6020FNX | WMQ25P06TS | NP50P03YDG | IRLR120PBF | STB20NM60D | ME7170



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