All MOSFET. FMC80N10T2 Datasheet

 

FMC80N10T2 Datasheet and Replacement


   Type Designator: FMC80N10T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0128 Ohm
   Package: T-PACK-S
 

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FMC80N10T2 Datasheet (PDF)

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FMC80N10T2

SPECIFICATIONDevice Name : Power MOSFETFMI80N10T2 (T-pack L)FMC80N10T2 (T-pack S)Type Name:FMB80N10T2 (T-pack SJ)Spec. No. :MS5F6118Date : Jun.-17-2005NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWN Jun.-17-'05aCHECKED Jun.-17-'05bMS5F6118 1 / 22CHECKED Jun.-17-'05H04-004-05This m aterial and the inform ation herein is the p roperty of Fuji E

Datasheet: FMC13N60E , FMC13N60ES , FMC16N50E , FMC16N50ES , FMC16N60E , FMC16N60ES , FMC20N50E , FMC20N50ES , IRF9640 , FMH06N80E , FMH06N90E , FMH07N90E , FMH09N90E , FMH11N90E , FMH13N60ES , FMH16N50E , FMH16N50ES .

History: AFP9576 | R6020FNX | WMQ25P06TS | NP50P03YDG | IRLR120PBF | STB20NM60D | ME7170

Keywords - FMC80N10T2 MOSFET datasheet

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