FMH06N80E Specs and Replacement

Type Designator: FMH06N80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-3P

FMH06N80E substitution

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FMH06N80E datasheet

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FMH06N80E

SPECIFICATION Device Name Power MOSFET Type Name FMH06N80E Spec. No. MS5F07479 Date Jan.-26-2010 APPROVED DATE NAME Fuji Electric Systems Co.,Ltd. Jan./26/ 10 DRAWN CHECKED Jan./26/ 10 MS5F07479 1/16 CHECKED REVISIONS Jan./26/ 10 H04-004-05 This material and the information herein is the property of Fuji Electric Systems Co.,Ltd. They shall be neither reproduced,... See More ⇒

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FMH06N80E

http //www.fujisemi.com FMH06N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate thres... See More ⇒

Detailed specifications: FMC13N60ES, FMC16N50E, FMC16N50ES, FMC16N60E, FMC16N60ES, FMC20N50E, FMC20N50ES, FMC80N10T2, EMB04N03H, FMH06N90E, FMH07N90E, FMH09N90E, FMH11N90E, FMH13N60ES, FMH16N50E, FMH16N50ES, FMH16N60ES

Keywords - FMH06N80E MOSFET specs

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