All MOSFET. FMH06N90E Datasheet

 

FMH06N90E Datasheet and Replacement


   Type Designator: FMH06N90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-3P-Q
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FMH06N90E Datasheet (PDF)

 ..1. Size:387K  fuji
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FMH06N90E

http://www.fujisemi.comFMH06N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate thres

 8.1. Size:244K  fuji
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FMH06N90E

SPECIFICATIONDevice Name : Power MOSFETType Name : FMH06N80ESpec. No. : MS5F07479 Date : Jan.-26-2010APPROVEDDATE NAMEFuji Electric Systems Co.,Ltd.Jan./26/10DRAWNCHECKED Jan./26/10MS5F07479 1/16CHECKEDREVISIONSJan./26/10H04-004-05This material and the information herein is the property of Fuji Electric SystemsCo.,Ltd. They shall be neither reproduced,

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SVSP24NF60FJDD2 | SSF65R130S2

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