FMH06N90E Datasheet and Replacement
Type Designator: FMH06N90E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-3P-Q
FMH06N90E substitution
FMH06N90E Datasheet (PDF)
fmh06n90e.pdf

http://www.fujisemi.comFMH06N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate thres
fmh06n80e.pdf

SPECIFICATIONDevice Name : Power MOSFETType Name : FMH06N80ESpec. No. : MS5F07479 Date : Jan.-26-2010APPROVEDDATE NAMEFuji Electric Systems Co.,Ltd.Jan./26/10DRAWNCHECKED Jan./26/10MS5F07479 1/16CHECKEDREVISIONSJan./26/10H04-004-05This material and the information herein is the property of Fuji Electric SystemsCo.,Ltd. They shall be neither reproduced,
Datasheet: FMC16N50E , FMC16N50ES , FMC16N60E , FMC16N60ES , FMC20N50E , FMC20N50ES , FMC80N10T2 , FMH06N80E , MMD60R360PRH , FMH07N90E , FMH09N90E , FMH11N90E , FMH13N60ES , FMH16N50E , FMH16N50ES , FMH16N60ES , FMH17N60ES .
Keywords - FMH06N90E MOSFET datasheet
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