FMH07N90E Datasheet and Replacement
Type Designator: FMH07N90E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-3P-Q
FMH07N90E substitution
FMH07N90E Datasheet (PDF)
fmh07n90e.pdf

http://www.fujisemi.comFMH07N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate thres
fmh07n90e.pdf

isc N-Channel MOSFET Transistor FMH07N90EFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC co
Datasheet: FMC16N50ES , FMC16N60E , FMC16N60ES , FMC20N50E , FMC20N50ES , FMC80N10T2 , FMH06N80E , FMH06N90E , 2N7002 , FMH09N90E , FMH11N90E , FMH13N60ES , FMH16N50E , FMH16N50ES , FMH16N60ES , FMH17N60ES , FMH19N60E .
History: SFF450M | FMC16N50ES | WMM30N80M3 | AFP8995 | 2SK1293
Keywords - FMH07N90E MOSFET datasheet
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History: SFF450M | FMC16N50ES | WMM30N80M3 | AFP8995 | 2SK1293



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