FMH07N90E Specs and Replacement
Type Designator: FMH07N90E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-3P-Q
FMH07N90E substitution
- MOSFET ⓘ Cross-Reference Search
FMH07N90E datasheet
fmh07n90e.pdf
http //www.fujisemi.com FMH07N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate thres... See More ⇒
fmh07n90e.pdf
isc N-Channel MOSFET Transistor FMH07N90E FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS (Uninterruptible Power Supply) DC-DC co... See More ⇒
Detailed specifications: FMC16N50ES, FMC16N60E, FMC16N60ES, FMC20N50E, FMC20N50ES, FMC80N10T2, FMH06N80E, FMH06N90E, MMIS60R580P, FMH09N90E, FMH11N90E, FMH13N60ES, FMH16N50E, FMH16N50ES, FMH16N60ES, FMH17N60ES, FMH19N60E
Keywords - FMH07N90E MOSFET specs
FMH07N90E cross reference
FMH07N90E equivalent finder
FMH07N90E pdf lookup
FMH07N90E substitution
FMH07N90E replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
