All MOSFET. FMH07N90E Datasheet

 

FMH07N90E Datasheet and Replacement


   Type Designator: FMH07N90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-3P-Q
 

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FMH07N90E Datasheet (PDF)

 ..1. Size:346K  fuji
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FMH07N90E

http://www.fujisemi.comFMH07N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate thres

 ..2. Size:233K  inchange semiconductor
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FMH07N90E

isc N-Channel MOSFET Transistor FMH07N90EFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC co

Datasheet: FMC16N50ES , FMC16N60E , FMC16N60ES , FMC20N50E , FMC20N50ES , FMC80N10T2 , FMH06N80E , FMH06N90E , MMIS60R580P , FMH09N90E , FMH11N90E , FMH13N60ES , FMH16N50E , FMH16N50ES , FMH16N60ES , FMH17N60ES , FMH19N60E .

History: APT50M50L2LL

Keywords - FMH07N90E MOSFET datasheet

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