FMH11N90E Specs and Replacement
Type Designator: FMH11N90E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 285 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-3P-Q
FMH11N90E substitution
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FMH11N90E datasheet
fmh11n90e.pdf
FMH11N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0 0.5V) ... See More ⇒
Detailed specifications: FMC16N60ES, FMC20N50E, FMC20N50ES, FMC80N10T2, FMH06N80E, FMH06N90E, FMH07N90E, FMH09N90E, AO4407A, FMH13N60ES, FMH16N50E, FMH16N50ES, FMH16N60ES, FMH17N60ES, FMH19N60E, FMH19N60ES, FMH20N50E
Keywords - FMH11N90E MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
