All MOSFET. FMH11N90E Datasheet

 

FMH11N90E Datasheet and Replacement


   Type Designator: FMH11N90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 285 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-3P-Q
 

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FMH11N90E Datasheet (PDF)

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FMH11N90E

FMH11N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.00.5V)

Datasheet: FMC16N60ES , FMC20N50E , FMC20N50ES , FMC80N10T2 , FMH06N80E , FMH06N90E , FMH07N90E , FMH09N90E , AO3407 , FMH13N60ES , FMH16N50E , FMH16N50ES , FMH16N60ES , FMH17N60ES , FMH19N60E , FMH19N60ES , FMH20N50E .

History: SI7192DP | MTC2402Q8 | MTBC7N10N3

Keywords - FMH11N90E MOSFET datasheet

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