All MOSFET. FMH13N60ES Datasheet

 

FMH13N60ES MOSFET. Datasheet pdf. Equivalent


   Type Designator: FMH13N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.7 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO-3P-Q

 FMH13N60ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FMH13N60ES Datasheet (PDF)

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 fmh13n60es.pdf

FMH13N60ES FMH13N60ES

FMH13N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRL530NS | IRLI510A

 

 
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