FMH13N60ES Specs and Replacement
Type Designator: FMH13N60ES
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO-3P-Q
FMH13N60ES substitution
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FMH13N60ES datasheet
fmh13n60es.pdf
FMH13N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V... See More ⇒
Detailed specifications: FMC20N50E, FMC20N50ES, FMC80N10T2, FMH06N80E, FMH06N90E, FMH07N90E, FMH09N90E, FMH11N90E, 60N06, FMH16N50E, FMH16N50ES, FMH16N60ES, FMH17N60ES, FMH19N60E, FMH19N60ES, FMH20N50E, FMH20N50ES
Keywords - FMH13N60ES MOSFET specs
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