FMH13N60ES Datasheet and Replacement
Type Designator: FMH13N60ES
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO-3P-Q
FMH13N60ES substitution
FMH13N60ES Datasheet (PDF)
fmh13n60es.pdf

FMH13N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V
Datasheet: FMC20N50E , FMC20N50ES , FMC80N10T2 , FMH06N80E , FMH06N90E , FMH07N90E , FMH09N90E , FMH11N90E , AO4468 , FMH16N50E , FMH16N50ES , FMH16N60ES , FMH17N60ES , FMH19N60E , FMH19N60ES , FMH20N50E , FMH20N50ES .
History: TF2369 | 2SK791 | BUK9Y22-100E | SE2321 | RDD050N20 | IXFK21N100Q | OSG90R1K2AF
Keywords - FMH13N60ES MOSFET datasheet
FMH13N60ES cross reference
FMH13N60ES equivalent finder
FMH13N60ES lookup
FMH13N60ES substitution
FMH13N60ES replacement
History: TF2369 | 2SK791 | BUK9Y22-100E | SE2321 | RDD050N20 | IXFK21N100Q | OSG90R1K2AF



LIST
Last Update
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
tta1943 transistor | fb4410z | 2sa899 | 2sc1166 | jcs9n50fc datasheet | 2n2147 | 2sc870 | 2sa771