2SJ327 Datasheet. Specs and Replacement
Type Designator: 2SJ327 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 410 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO252
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2SJ327 datasheet
2sj327.pdf
2SJ327 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.010 at VGS = - 10 V 55 RoHS* - 40 COMPLIANT 0.014 at VGS = - 4.5 V 54 TO-251 S G G D S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Gat... See More ⇒
2sj320.pdf
Ordering number EN4615A P-Channel Silicon MOSFET 2SJ320 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ320] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO... See More ⇒
Detailed specifications: 2SJ212, 2SJ218, 2SJ243, 2SJ302, 2SJ303, 2SJ324, 2SJ325, 2SJ326, 4435, 2SJ328, 2SJ329, 2SJ330, 2SJ331, 2SJ353, 2SJ411, 2SJ424, 2SJ425
Keywords - 2SJ327 MOSFET specs
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