FMH30N60S1 Specs and Replacement

Type Designator: FMH30N60S1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 4670 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO-3P

FMH30N60S1 substitution

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FMH30N60S1 datasheet

 ..1. Size:514K  fuji
 fmh30n60s1.pdf pdf_icon

FMH30N60S1

http //www.fujielectric.com/products/semiconductor/ FMH30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance 3.2 0.1 TO-3P 15.5max 13 0.2 1.5 0.2 Low switching loss 10 0.2 4.5 0.2 easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications ... See More ⇒

 0.1. Size:257K  inchange semiconductor
 fmh30n60s1fd.pdf pdf_icon

FMH30N60S1

isc N-Channel MOSFET Transistor FMH30N60S1FD FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai... See More ⇒

Detailed specifications: FMH20N50E, FMH20N50ES, FMH21N50ES, FMH23N50ES, FMH23N60E, FMH23N60ES, FMH28N50E, FMH28N50ES, IRF1404, FMH47N60S1, FMI03N60E, FMI05N50E, FMI05N60E, FMI06N60ES, FMI07N50E, FMI10N60E, FMI11N60E

Keywords - FMH30N60S1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.