All MOSFET. FMH30N60S1 Datasheet

 

FMH30N60S1 Datasheet and Replacement


   Type Designator: FMH30N60S1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 4670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-3P
 

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FMH30N60S1 Datasheet (PDF)

 ..1. Size:514K  fuji
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FMH30N60S1

http://www.fujielectric.com/products/semiconductor/FMH30N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistance 3.2 0.1TO-3P15.5max13 0.2 1.50.2Low switching loss10 0.2 4.50.2easy to use (more controllabe switching dV/dt by R )gDrain(D)Applications

 0.1. Size:257K  inchange semiconductor
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FMH30N60S1

isc N-Channel MOSFET Transistor FMH30N60S1FDFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

Datasheet: FMH20N50E , FMH20N50ES , FMH21N50ES , FMH23N50ES , FMH23N60E , FMH23N60ES , FMH28N50E , FMH28N50ES , IRF1404 , FMH47N60S1 , FMI03N60E , FMI05N50E , FMI05N60E , FMI06N60ES , FMI07N50E , FMI10N60E , FMI11N60E .

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