FMI11N60E Specs and Replacement

Type Designator: FMI11N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: T-PACK-L

FMI11N60E substitution

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FMI11N60E datasheet

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FMI11N60E

FMI11N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒

Detailed specifications: FMH30N60S1, FMH47N60S1, FMI03N60E, FMI05N50E, FMI05N60E, FMI06N60ES, FMI07N50E, FMI10N60E, 10N60, FMI12N50E, FMI12N50ES, FMI12N60ES, FMI13N60E, FMI13N60ES, FMI16N50E, FMI16N50ES, FMI16N60E

Keywords - FMI11N60E MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.