All MOSFET. FMI11N60E Datasheet

 

FMI11N60E Datasheet and Replacement


   Type Designator: FMI11N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: T-PACK-L
 

 FMI11N60E substitution

   - MOSFET ⓘ Cross-Reference Search

 

FMI11N60E Datasheet (PDF)

 ..1. Size:570K  fuji
 fmi11n60e.pdf pdf_icon

FMI11N60E

FMI11N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: FMH30N60S1 , FMH47N60S1 , FMI03N60E , FMI05N50E , FMI05N60E , FMI06N60ES , FMI07N50E , FMI10N60E , 10N60 , FMI12N50E , FMI12N50ES , FMI12N60ES , FMI13N60E , FMI13N60ES , FMI16N50E , FMI16N50ES , FMI16N60E .

History: AOI2614 | SQJ980EP | IXFH80N085 | NP60N055NUK | NP74N04YUG | CEM3172 | AONR21307

Keywords - FMI11N60E MOSFET datasheet

 FMI11N60E cross reference
 FMI11N60E equivalent finder
 FMI11N60E lookup
 FMI11N60E substitution
 FMI11N60E replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.