FMI20N50ES Specs and Replacement
Type Designator: FMI20N50ES
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: T-PACK-L
FMI20N50ES substitution
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FMI20N50ES datasheet
fmi20n50es.pdf
FMI20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.... See More ⇒
fmi20n50e.pdf
FMI20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒
Detailed specifications: FMI12N60ES, FMI13N60E, FMI13N60ES, FMI16N50E, FMI16N50ES, FMI16N60E, FMI16N60ES, FMI20N50E, 2SK3878, FMI80N10T2, FML12N50ES, FML12N60ES, FML13N60ES, FML16N50ES, FML16N60ES, FML20N50ES, FS100KMJ-03F
Keywords - FMI20N50ES MOSFET specs
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