All MOSFET. FMI20N50ES Datasheet

 

FMI20N50ES Datasheet and Replacement


   Type Designator: FMI20N50ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.7 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 57 nC
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: T-PACK-L
 

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FMI20N50ES Datasheet (PDF)

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FMI20N50ES

FMI20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack (L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.

 5.1. Size:365K  fuji
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FMI20N50ES

FMI20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: FMI12N60ES , FMI13N60E , FMI13N60ES , FMI16N50E , FMI16N50ES , FMI16N60E , FMI16N60ES , FMI20N50E , IRFP260 , FMI80N10T2 , FML12N50ES , FML12N60ES , FML13N60ES , FML16N50ES , FML16N60ES , FML20N50ES , FS100KMJ-03F .

History: SVT044R5NDTR

Keywords - FMI20N50ES MOSFET datasheet

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