FMI80N10T2 PDF and Equivalents Search

 

FMI80N10T2 Specs and Replacement


   Type Designator: FMI80N10T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0128 Ohm
   Package: T-PACK-L
 

 FMI80N10T2 substitution

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FMI80N10T2 datasheet

 ..1. Size:458K  fuji
 fmb80n10t2 fmc80n10t2 fmi80n10t2.pdf pdf_icon

FMI80N10T2

SPECIFICATION Device Name Power MOSFET FMI80N10T2 (T-pack L) FMC80N10T2 (T-pack S) Type Name FMB80N10T2 (T-pack SJ) Spec. No. MS5F6118 Date Jun.-17-2005 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Jun.-17-'05 a CHECKED Jun.-17-'05 b MS5F6118 1 / 22 CHECKED Jun.-17-'05 H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji E... See More ⇒

Detailed specifications: FMI13N60E , FMI13N60ES , FMI16N50E , FMI16N50ES , FMI16N60E , FMI16N60ES , FMI20N50E , FMI20N50ES , STP75NF75 , FML12N50ES , FML12N60ES , FML13N60ES , FML16N50ES , FML16N60ES , FML20N50ES , FS100KMJ-03F , FS100UMJ-03F .

Keywords - FMI80N10T2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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