FMI80N10T2 MOSFET. Datasheet pdf. Equivalent
Type Designator: FMI80N10T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 270 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 120 nC
Rise Time (tr): 44 nS
Drain-Source Capacitance (Cd): 740 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0128 Ohm
Package: T-PACK-L
FMI80N10T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMI80N10T2 Datasheet (PDF)
1.1. fmb80n10t2 fmc80n10t2 fmi80n10t2.pdf 
Size:458K _upd-mosfet
SPECIFICATION Device Name : Power MOSFET FMI80N10T2 (T-pack L) FMC80N10T2 (T-pack S) Type Name: FMB80N10T2 (T-pack SJ) Spec. No. : MS5F6118 Date : Jun.-17-2005 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Jun.-17-'05 a CHECKED Jun.-17-'05 b MS5F6118 1 / 22 CHECKED Jun.-17-'05 H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji E
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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