FMI80N10T2 Datasheet and Replacement
Type Designator: FMI80N10T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 740 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0128 Ohm
Package: T-PACK-L
FMI80N10T2 substitution
FMI80N10T2 Datasheet (PDF)
fmb80n10t2 fmc80n10t2 fmi80n10t2.pdf

SPECIFICATIONDevice Name : Power MOSFETFMI80N10T2 (T-pack L)FMC80N10T2 (T-pack S)Type Name:FMB80N10T2 (T-pack SJ)Spec. No. :MS5F6118Date : Jun.-17-2005NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWN Jun.-17-'05aCHECKED Jun.-17-'05bMS5F6118 1 / 22CHECKED Jun.-17-'05H04-004-05This m aterial and the inform ation herein is the p roperty of Fuji E
Datasheet: FMI13N60E , FMI13N60ES , FMI16N50E , FMI16N50ES , FMI16N60E , FMI16N60ES , FMI20N50E , FMI20N50ES , 12N60 , FML12N50ES , FML12N60ES , FML13N60ES , FML16N50ES , FML16N60ES , FML20N50ES , FS100KMJ-03F , FS100UMJ-03F .
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