All MOSFET. FMI80N10T2 Datasheet

 

FMI80N10T2 MOSFET. Datasheet pdf. Equivalent

Type Designator: FMI80N10T2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 270 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 120 nC

Rise Time (tr): 44 nS

Drain-Source Capacitance (Cd): 740 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0128 Ohm

Package: T-PACK-L

FMI80N10T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FMI80N10T2 Datasheet (PDF)

1.1. fmb80n10t2 fmc80n10t2 fmi80n10t2.pdf Size:458K _upd-mosfet

FMI80N10T2
FMI80N10T2

SPECIFICATION Device Name : Power MOSFET FMI80N10T2 (T-pack L) FMC80N10T2 (T-pack S) Type Name: FMB80N10T2 (T-pack SJ) Spec. No. : MS5F6118 Date : Jun.-17-2005 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Jun.-17-'05 a CHECKED Jun.-17-'05 b MS5F6118 1 / 22 CHECKED Jun.-17-'05 H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji E

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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