All MOSFET. FMI80N10T2 Datasheet

 

FMI80N10T2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FMI80N10T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0128 Ohm
   Package: T-PACK-L

 FMI80N10T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FMI80N10T2 Datasheet (PDF)

 ..1. Size:458K  fuji
 fmb80n10t2 fmc80n10t2 fmi80n10t2.pdf

FMI80N10T2 FMI80N10T2

SPECIFICATIONDevice Name : Power MOSFETFMI80N10T2 (T-pack L)FMC80N10T2 (T-pack S)Type Name:FMB80N10T2 (T-pack SJ)Spec. No. :MS5F6118Date : Jun.-17-2005NAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWN Jun.-17-'05aCHECKED Jun.-17-'05bMS5F6118 1 / 22CHECKED Jun.-17-'05H04-004-05This m aterial and the inform ation herein is the p roperty of Fuji E

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AON3402 | FDP6030L | 2SK2848 | ZXMP3A17E6TA

 

 
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