IRLIZ14A MOSFET Datasheet: N-Ch, 60V, 10A. Full specification with pinout and replacement list

IRLIZ14A Specs and Replacement

Type Designator: IRLIZ14A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: TO262

IRLIZ14A substitution

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IRLIZ14A datasheet

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7.1. Size:1073K international rectifier
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PD- 95655 IRLIZ14GPbF Lead-Free 7/26/04 Document Number 91315 www.vishay.com 1 IRLIZ14GPbF Document Number 91315 www.vishay.com 2 IRLIZ14GPbF Document Number 91315 www.vishay.com 3 IRLIZ14GPbF Document Number 91315 www.vishay.com 4 IRLIZ14GPbF Document Number 91315 www.vishay.com 5 IRLIZ14GPbF Document Number 91315 www.vishay.com 6 IRLIZ14GPbF Peak Diode Re... See More ⇒

7.2. Size:171K international rectifier
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7.3. Size:1637K vishay
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IRLIZ14G, SiHLIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.20 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive Qgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 6.... See More ⇒