FSS275 Specs and Replacement
Type Designator: FSS275
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: SOP-8
FSS275 substitution
- MOSFET ⓘ Cross-Reference Search
FSS275 datasheet
fss275-tl-e.pdf
Ordering number ENA0732 FSS275 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device FSS275 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 6 A Drai... See More ⇒
fss273-tl-e.pdf
Ordering number ENA0329 FSS273 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device FSS273 Applications Features Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 45 V Gate-to-Source Voltage VGS... See More ⇒
Detailed specifications: FS70VS-06, FS70VS-2, FS70VSJ-06F, FS70VSJ-2, FS7KM-12A, FS7VS-12A, FSS264, FSS273, IRFB4110, FSS804, FTCO3V455A1, FTD2011, FTD2019, FTK3341L, FTK3857L, FTK3857T, FTK50N06
Keywords - FSS275 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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