All MOSFET. FTD2019 Datasheet

 

FTD2019 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FTD2019
   Marking Code: 2019
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TSSOP-8

 FTD2019 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTD2019 Datasheet (PDF)

SHOW MORE

Datasheet: FS7KM-12A , FS7VS-12A , FSS264 , FSS273 , FSS275 , FSS804 , FTCO3V455A1 , FTD2011 , IRFB4227 , FTK3341L , FTK3857L , FTK3857T , FTK50N06 , FTK630 , FTK830 , FTK840 , FW217A .

 

 
Back to Top