FTK630 Specs and Replacement

Type Designator: FTK630

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220

FTK630 substitution

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FTK630 datasheet

 ..1. Size:379K  first silicon
 ftk630 ftk630p f.pdf pdf_icon

FTK630

SEMICONDUCTOR FTK630P / F TECHNICAL DATA MOSFET 9A, 200V, 0.4 , N-CHANNEL POWER MOSFETS P 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. F 1 TO-220F FEATURES * 9A, 200V, Low RDS(ON... See More ⇒

Detailed specifications: FSS804, FTCO3V455A1, FTD2011, FTD2019, FTK3341L, FTK3857L, FTK3857T, FTK50N06, 2N7000, FTK830, FTK840, FW217A, FW297, FW344A, FW389, FW4604, FX20ASJ-03F

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