All MOSFET. FTK630 Datasheet

 

FTK630 Datasheet and Replacement


   Type Designator: FTK630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220
 

 FTK630 substitution

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FTK630 Datasheet (PDF)

 ..1. Size:379K  first silicon
 ftk630 ftk630p f.pdf pdf_icon

FTK630

SEMICONDUCTORFTK630P / FTECHNICAL DATAMOSFET9A, 200V, 0.4 , N-CHANNELPOWER MOSFETSP :1DESCRIPTIONTO-220The N-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.F :1TO-220FFEATURES* 9A, 200V, Low RDS(ON

Datasheet: FSS804 , FTCO3V455A1 , FTD2011 , FTD2019 , FTK3341L , FTK3857L , FTK3857T , FTK50N06 , IRF9540 , FTK830 , FTK840 , FW217A , FW297 , FW344A , FW389 , FW4604 , FX20ASJ-03F .

Keywords - FTK630 MOSFET datasheet

 FTK630 cross reference
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