FTK830 Specs and Replacement

Type Designator: FTK830

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220

FTK830 substitution

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FTK830 datasheet

 ..1. Size:262K  first silicon
 ftk830 ftk830p f d i.pdf pdf_icon

FTK830

SEMICONDUCTOR FTK830P / F / D / I TECHNICAL DATA Power MOSFET 5A, 500V, 1.5 , N-CHANNEL POWER MOSFET I 1 TO - 251 DESCRIPTION D 1 The N-Channel enhancement mode silicon gate power MOSFET TO - 252 is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. P 1 TO - 220... See More ⇒

Detailed specifications: FTCO3V455A1, FTD2011, FTD2019, FTK3341L, FTK3857L, FTK3857T, FTK50N06, FTK630, P55NF06, FTK840, FW217A, FW297, FW344A, FW389, FW4604, FX20ASJ-03F, FX20ASJ-06

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.