FW217A Specs and Replacement

Type Designator: FW217A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: SOIC-8

FW217A substitution

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FW217A datasheet

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FW217A

Ordering number EN8994B FW217A N-Channel Power MOSFET http //onsemi.com 35V, 6A, 39m , Dual SOIC8 Features On-state resistance RDS(on)1=30m (typ.) 4.5V drive Halogen free compliance Protection Diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGS... See More ⇒

Detailed specifications: FTD2019, FTK3341L, FTK3857L, FTK3857T, FTK50N06, FTK630, FTK830, FTK840, 7N65, FW297, FW344A, FW389, FW4604, FX20ASJ-03F, FX20ASJ-06, FX20ASJ-2, FX20KMJ-03

Keywords - FW217A MOSFET specs

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