All MOSFET. FW217A Datasheet

 

FW217A Datasheet and Replacement


   Type Designator: FW217A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: SOIC-8
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FW217A Datasheet (PDF)

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FW217A

Ordering number : EN8994BFW217AN-Channel Power MOSFEThttp://onsemi.com35V, 6A, 39m , Dual SOIC8Features On-state resistance RDS(on)1=30m (typ.) 4.5V drive Halogen free compliance Protection Diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGS

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History: NCE70T540D | NCE30P12BS | NP180N04TUJ | SSW65R190S2 | SRT10N160LD | SM4186T9RL | APT10021JFLL

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