FX70SMJ-03 Specs and Replacement
Type Designator: FX70SMJ-03
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 228 nS
Cossⓘ - Output Capacitance: 2300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0123 Ohm
Package: TO-3P
FX70SMJ-03 substitution
- MOSFET ⓘ Cross-Reference Search
FX70SMJ-03 datasheet
fx70smj-03.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: FX6ASJ-03 , FX6ASJ-06 , FX6ASJ-2 , FX6ASJ-3 , FX6KMJ-06 , FX6KMJ-2 , FX6KMJ-3 , FX70KMJ-03 , 4N60 , FY10AAJ-03F , FY12AAJ-03F , FY14AAJ-03F , FY4ADJ-03A , FY4AEJ-03 , FY5ACJ-03F , FY6ACJ-03A , FY7BCH-02F .
Keywords - FX70SMJ-03 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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