All MOSFET. FY14AAJ-03F Datasheet

 

FY14AAJ-03F Datasheet and Replacement


   Type Designator: FY14AAJ-03F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 53 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm
   Package: SOP-8
 

 FY14AAJ-03F substitution

   - MOSFET ⓘ Cross-Reference Search

 

FY14AAJ-03F Datasheet (PDF)

 ..1. Size:181K  renesas
 fy14aaj-03f.pdf pdf_icon

FY14AAJ-03F

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - FY14AAJ-03F MOSFET datasheet

 FY14AAJ-03F cross reference
 FY14AAJ-03F equivalent finder
 FY14AAJ-03F lookup
 FY14AAJ-03F substitution
 FY14AAJ-03F replacement

 

 
Back to Top

 


 
.