IRF8513PBF PDF and Equivalents Search

 

IRF8513PBF Specs and Replacement

Type Designator: IRF8513PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.5 nS

Cossⓘ - Output Capacitance: 172 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm

Package: SO-8

IRF8513PBF substitution

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IRF8513PBF datasheet

 ..1. Size:336K  international rectifier
 irf8513pbf.pdf pdf_icon

IRF8513PBF

PD - 96196 IRF8513PbF HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Q1 15.5m @VGS = 10V 8.0A 30V Graphics Cards, Game Consoles Q2 12.7m @VGS = 10V 11A and Set-Top Box Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Test... See More ⇒

Detailed specifications: IRF840B , IRF840LC , IRF840LCLPBF , IRF840LCPBF , IRF840LCSPBF , IRF840LPBF , IRF840PBF , IRF840SPBF , IRF830 , IRF8707GPBF , IRF8707PBF , IRF8707PBF-1 , IRF8714GPBF , IRF8714PBF , IRF8714PBF-1 , IRF8721GPBF , IRF8721PBF .

History: 2N5639

Keywords - IRF8513PBF MOSFET specs

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