All MOSFET. IRF8513PBF Datasheet

 

IRF8513PBF Datasheet and Replacement


   Type Designator: IRF8513PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 172 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
   Package: SO-8
 

 IRF8513PBF substitution

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IRF8513PBF Datasheet (PDF)

 ..1. Size:336K  international rectifier
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IRF8513PBF

PD - 96196IRF8513PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,Q1 15.5m @VGS = 10V 8.0A30VGraphics Cards, Game ConsolesQ2 12.7m @VGS = 10V 11Aand Set-Top BoxBenefitsl Low Gate Charge and Low RDS(on)l Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Ratingl 100% Test

Datasheet: IRF840B , IRF840LC , IRF840LCLPBF , IRF840LCPBF , IRF840LCSPBF , IRF840LPBF , IRF840PBF , IRF840SPBF , P0903BDG , IRF8707GPBF , IRF8707PBF , IRF8707PBF-1 , IRF8714GPBF , IRF8714PBF , IRF8714PBF-1 , IRF8721GPBF , IRF8721PBF .

History: AP02N60P

Keywords - IRF8513PBF MOSFET datasheet

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