All MOSFET. IRF9130SMD Datasheet

 

IRF9130SMD Datasheet and Replacement


   Type Designator: IRF9130SMD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SMD1
 

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IRF9130SMD Datasheet (PDF)

 ..1. Size:20K  semelab
 irf9130smd.pdf pdf_icon

IRF9130SMD

IRF9130SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -8A RDS(on) 0.35FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUI

 0.1. Size:18K  semelab
 irf9130smd05 irfnj9130.pdf pdf_icon

IRF9130SMD

IRFNJ9130IRF9130SMD05MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.APPLICATIONS3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)1 3VDSS -100VID(cont) -11A2RDS(on) 0.30 0.127 (0.005) FEATURES16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020) HERMETICALLY SEALED max.7.26 (

 7.1. Size:149K  international rectifier
 2n6804 irf9130.pdf pdf_icon

IRF9130SMD

PD - 90549CIRF9130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804HEXFETTRANSISTORS JANTXV2N6804THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9130 -100V 0.30 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique pr

 7.2. Size:520K  samsung
 irfp9130-33 irf9130-33 irf9530-33.pdf pdf_icon

IRF9130SMD

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Datasheet: IRF8734PBF , IRF8736PBF , IRF8736PBF-1 , IRF8788PBF , IRF8788PBF-1 , IRF8852PBF , IRF8910GPBF , IRF8910PBF-1 , 20N60 , IRF9130SMD05 , IRF9310PBF , IRF9310PBF-1 , IRF9317PBF , IRF9321PBF , IRF9328PBF , IRF9332PBF , IRF9333PBF .

Keywords - IRF9130SMD MOSFET datasheet

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