SSH3N90 Specs and Replacement
Type Designator: SSH3N90
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO-3P
SSH3N90 substitution
- MOSFET ⓘ Cross-Reference Search
SSH3N90 datasheet
Detailed specifications: IRF9410PBF , IRF9510SPBF , IRF9520NLPBF , IRF9520S , IRF9520SPBF , IRF9530-220M , SSH10N80 , SSH11N90 , AON7408 , SSH4N55 , SSH4N60 , SSH4N80 , SSH4N90 , SSH5N90 , SSH60N08 , SSH6N80 , SSH8N70 .
History: IRF9393PBF | IRF9392PBF
Keywords - SSH3N90 MOSFET specs
SSH3N90 cross reference
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SSH3N90 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IRF9393PBF | IRF9392PBF
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