SSH3N90 PDF and Equivalents Search

 

SSH3N90 Specs and Replacement

Type Designator: SSH3N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 75 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO-3P

SSH3N90 substitution

- MOSFET ⓘ Cross-Reference Search

 

SSH3N90 datasheet

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SSH3N90

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SSH3N90

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Detailed specifications: IRF9410PBF , IRF9510SPBF , IRF9520NLPBF , IRF9520S , IRF9520SPBF , IRF9530-220M , SSH10N80 , SSH11N90 , AON7408 , SSH4N55 , SSH4N60 , SSH4N80 , SSH4N90 , SSH5N90 , SSH60N08 , SSH6N80 , SSH8N70 .

Keywords - SSH3N90 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
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