All MOSFET. IRLM014A Datasheet

 

IRLM014A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLM014A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.2 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: SOT223

 IRLM014A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLM014A Datasheet (PDF)

 ..1. Size:223K  samsung
 irlm014a.pdf

IRLM014A IRLM014A

IRLM014AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.155 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 60V2 Lower RDS(ON) : 0.122 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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