SSH4N55 Specs and Replacement
Type Designator: SSH4N55
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-3P
SSH4N55 substitution
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SSH4N55 datasheet
ssh4n90.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
ssh4n80as.pdf
SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2. (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac... See More ⇒
Detailed specifications: IRF9510SPBF , IRF9520NLPBF , IRF9520S , IRF9520SPBF , IRF9530-220M , SSH10N80 , SSH11N90 , SSH3N90 , 2SK3878 , SSH4N60 , SSH4N80 , SSH4N90 , SSH5N90 , SSH60N08 , SSH6N80 , SSH8N70 , SSH8N80 .
History: IRF9393PBF | IRF9392PBF
Keywords - SSH4N55 MOSFET specs
SSH4N55 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRF9393PBF | IRF9392PBF
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