SSH4N55 PDF and Equivalents Search

 

SSH4N55 Specs and Replacement

Type Designator: SSH4N55

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 40 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-3P

SSH4N55 substitution

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SSH4N55 datasheet

 ..2. Size:441K  semelab
ssh4n55 ssh4n60.pdf pdf_icon

SSH4N55

SSH4N55 PCB 24 ... See More ⇒

 9.1. Size:165K  fairchild semi
ssh4n90.pdf pdf_icon

SSH4N55

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

 9.2. Size:211K  samsung
ssh4n80as.pdf pdf_icon

SSH4N55

SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2. (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac... See More ⇒

Detailed specifications: IRF9510SPBF , IRF9520NLPBF , IRF9520S , IRF9520SPBF , IRF9530-220M , SSH10N80 , SSH11N90 , SSH3N90 , 2SK3878 , SSH4N60 , SSH4N80 , SSH4N90 , SSH5N90 , SSH60N08 , SSH6N80 , SSH8N70 , SSH8N80 .

History: IRF9393PBF | IRF9392PBF

Keywords - SSH4N55 MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 


 
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