All MOSFET. SSH4N55 Datasheet

 

SSH4N55 Datasheet and Replacement


   Type Designator: SSH4N55
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-3P
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SSH4N55 Datasheet (PDF)

 ..1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

SSH4N55

 ..2. Size:441K  semelab
 ssh4n55 ssh4n60.pdf pdf_icon

SSH4N55

SSH4N55 PCB24

 9.1. Size:165K  fairchild semi
 ssh4n90.pdf pdf_icon

SSH4N55

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 9.2. Size:211K  samsung
 ssh4n80as.pdf pdf_icon

SSH4N55

SSH4N80ASAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2. (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charac

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SSM40T03GP | DMNH10H028SCT | IRLS4030 | PJW1NA50 | IRFB3307Z | BUK7M12-40E | WML11N80M3

Keywords - SSH4N55 MOSFET datasheet

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