All MOSFET. SSH4N80 Datasheet

 

SSH4N80 Datasheet and Replacement


   Type Designator: SSH4N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO-3P
 

 SSH4N80 substitution

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SSH4N80 Datasheet (PDF)

 ..1. Size:276K  semelab
 ssh4n80.pdf pdf_icon

SSH4N80

 0.1. Size:211K  samsung
 ssh4n80as.pdf pdf_icon

SSH4N80

SSH4N80ASAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2. (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charac

 9.1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

SSH4N80

 9.2. Size:165K  fairchild semi
 ssh4n90.pdf pdf_icon

SSH4N80

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Datasheet: IRF9520S , IRF9520SPBF , IRF9530-220M , SSH10N80 , SSH11N90 , SSH3N90 , SSH4N55 , SSH4N60 , K4145 , SSH4N90 , SSH5N90 , SSH60N08 , SSH6N80 , SSH8N70 , SSH8N80 , SSI2N60B , SSI4N60B .

Keywords - SSH4N80 MOSFET datasheet

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