SSH4N80 PDF and Equivalents Search

 

SSH4N80 Specs and Replacement

Type Designator: SSH4N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 130 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: TO-3P

SSH4N80 substitution

- MOSFET ⓘ Cross-Reference Search

 

SSH4N80 datasheet

 ..1. Size:276K  semelab
ssh4n80.pdf pdf_icon

SSH4N80

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 0.1. Size:211K  samsung
ssh4n80as.pdf pdf_icon

SSH4N80

SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2. (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac... See More ⇒

 9.2. Size:165K  fairchild semi
ssh4n90.pdf pdf_icon

SSH4N80

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

Detailed specifications: IRF9520S , IRF9520SPBF , IRF9530-220M , SSH10N80 , SSH11N90 , SSH3N90 , SSH4N55 , SSH4N60 , 2N7002 , SSH4N90 , SSH5N90 , SSH60N08 , SSH6N80 , SSH8N70 , SSH8N80 , SSI2N60B , SSI4N60B .

History: IRF9393PBF | IRF9392PBF

Keywords - SSH4N80 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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