SSH4N80 Datasheet. Specs and Replacement

Type Designator: SSH4N80  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: TO-3P

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SSH4N80 substitution

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SSH4N80 datasheet

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Detailed specifications: IRF9520S, IRF9520SPBF, IRF9530-220M, SSH10N80, SSH11N90, SSH3N90, SSH4N55, SSH4N60, IRF9540N, SSH4N90, SSH5N90, SSH60N08, SSH6N80, SSH8N70, SSH8N80, SSI2N60B, SSI4N60B

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.