SSI4N60B Datasheet and Replacement
Type Designator: SSI4N60B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: I2-PAK
SSI4N60B substitution
SSI4N60B Datasheet (PDF)
ssi4n60b ssi4n60b ssw4n60b.pdf
November 2001SSW4N60B / SSI4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to
Datasheet: SSH4N80 , SSH4N90 , SSH5N90 , SSH60N08 , SSH6N80 , SSH8N70 , SSH8N80 , SSI2N60B , AON7410 , SSM03N70GH , SSM03N70GJ , SSM03N70GP-H , SSM04N70BGF-A , SSM04N70BGF-H , SSM04N70BGP-A , SSM09N70GP-A , SSM09N90CGW .
History: PZ5G7EA
Keywords - SSI4N60B MOSFET datasheet
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History: PZ5G7EA
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