All MOSFET. SSI4N60B Datasheet

 

SSI4N60B Datasheet and Replacement


   Type Designator: SSI4N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: I2-PAK

 SSI4N60B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSI4N60B Datasheet (PDF)

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SSI4N60B

November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to ... See More ⇒

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Datasheet: SSH4N80 , SSH4N90 , SSH5N90 , SSH60N08 , SSH6N80 , SSH8N70 , SSH8N80 , SSI2N60B , SPP20N60C3 , SSM03N70GH , SSM03N70GJ , SSM03N70GP-H , SSM04N70BGF-A , SSM04N70BGF-H , SSM04N70BGP-A , SSM09N70GP-A , SSM09N90CGW .

Keywords - SSI4N60B MOSFET datasheet

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