SSM03N70GJ Datasheet. Specs and Replacement

Type Designator: SSM03N70GJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm

Package: TO-251

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SSM03N70GJ substitution

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SSM03N70GJ datasheet

 ..1. Size:181K  silicon standard
ssm03n70gh ssm03n70gj.pdf pdf_icon

SSM03N70GJ

SSM03N70GH/GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY BVDSS 600V D RDS(ON) 3.6 Repetitive Avalanche Rated ID 3.3A Fast Switching Speed G Simple Drive Requirement S DESCRIPTION G D S TO-252(H) The TO-252 package is universally preferred for all commercial- Industrial surface mount applications and suited for AC/DC converters. The through-hole version ... See More ⇒

 5.1. Size:571K  silicon standard
ssm03n70gp-h.pdf pdf_icon

SSM03N70GJ

SSM03N70GP-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM03N70GP-H achieves fast switching performance BVDSS 700V with low gate charge without a complex drive circuit. It RDS(ON) 4.4 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 2.5A D Pb-free; RoHS-compliant TO-220 The SSM03N70G... See More ⇒

Detailed specifications: SSH5N90, SSH60N08, SSH6N80, SSH8N70, SSH8N80, SSI2N60B, SSI4N60B, SSM03N70GH, K4145, SSM03N70GP-H, SSM04N70BGF-A, SSM04N70BGF-H, SSM04N70BGP-A, SSM09N70GP-A, SSM09N90CGW, SSM09N90GW, SSM1333GU

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