All MOSFET. SSM03N70GJ Datasheet

 

SSM03N70GJ Datasheet and Replacement


   Type Designator: SSM03N70GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
   Package: TO-251
 

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SSM03N70GJ Datasheet (PDF)

 ..1. Size:181K  silicon standard
 ssm03n70gh ssm03n70gj.pdf pdf_icon

SSM03N70GJ

SSM03N70GH/GJN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY BVDSS 600VDRDS(ON) 3.6Repetitive Avalanche Rated ID 3.3AFast Switching Speed GSimple Drive Requirement SDESCRIPTION GDS TO-252(H)The TO-252 package is universally preferred for all commercial- Industrial surface mount applications and suited for AC/DC converters. The through-hole version

 5.1. Size:571K  silicon standard
 ssm03n70gp-h.pdf pdf_icon

SSM03N70GJ

SSM03N70GP-HN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM03N70GP-H achieves fast switching performanceBVDSS 700Vwith low gate charge without a complex drive circuit. ItRDS(ON) 4.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 2.5AD Pb-free; RoHS-compliant TO-220The SSM03N70G

Datasheet: SSH5N90 , SSH60N08 , SSH6N80 , SSH8N70 , SSH8N80 , SSI2N60B , SSI4N60B , SSM03N70GH , IRFB3607 , SSM03N70GP-H , SSM04N70BGF-A , SSM04N70BGF-H , SSM04N70BGP-A , SSM09N70GP-A , SSM09N90CGW , SSM09N90GW , SSM1333GU .

History: KP745A

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