SSM1333GU Datasheet. Specs and Replacement

Type Designator: SSM1333GU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: SOT-323

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SSM1333GU datasheet

 ..1. Size:534K  silicon standard
 ssm1333gu.pdf pdf_icon

SSM1333GU

SSM1333GU P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM1333GU acheives fast switching performance BVDSS -20V with low gate charge without a complex drive circuit. It RDS(ON) 600m is suitable for low voltage applications such as drivers, high-side line and general load-switching circuits. I -550mA D The SSM1333GU is supplied in an RoHS-compliant Pb-f... See More ⇒

Detailed specifications: SSM03N70GJ, SSM03N70GP-H, SSM04N70BGF-A, SSM04N70BGF-H, SSM04N70BGP-A, SSM09N70GP-A, SSM09N90CGW, SSM09N90GW, 12N60, SSM2030GM, SSM2030SD, SSM20N03S, SSM20P02GH, SSM20P02GJ, SSM2301GN, SSM2302GN, SSM2303GN

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