SSM1333GU PDF and Equivalents Search

 

SSM1333GU Specs and Replacement


   Type Designator: SSM1333GU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   Qg ⓘ - Total Gate Charge: 1.7 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: SOT-323
 

 SSM1333GU substitution

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SSM1333GU datasheet

 ..1. Size:534K  silicon standard
ssm1333gu.pdf pdf_icon

SSM1333GU

SSM1333GU P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM1333GU acheives fast switching performance BVDSS -20V with low gate charge without a complex drive circuit. It RDS(ON) 600m is suitable for low voltage applications such as drivers, high-side line and general load-switching circuits. I -550mA D The SSM1333GU is supplied in an RoHS-compliant Pb-f... See More ⇒

Detailed specifications: SSM03N70GJ , SSM03N70GP-H , SSM04N70BGF-A , SSM04N70BGF-H , SSM04N70BGP-A , SSM09N70GP-A , SSM09N90CGW , SSM09N90GW , IRF530 , SSM2030GM , SSM2030SD , SSM20N03S , SSM20P02GH , SSM20P02GJ , SSM2301GN , SSM2302GN , SSM2303GN .

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