SSM25T03GJ Datasheet. Specs and Replacement
Type Designator: SSM25T03GJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 200 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO-251
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SSM25T03GJ substitution
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SSM25T03GJ datasheet
ssm25t03gh ssm25t03gj.pdf
SSM25T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM25T03 acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It is RDS(ON) 35m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 20A D The SSM25T03GH is in a TO-252 package, which is Pb-free; RoHS... See More ⇒
Detailed specifications: SSM2309GN, SSM2310GN, SSM2312GN, SSM2313GN, SSM2314GN, SSM2316GN, SSM2318GEN, SSM25T03GH, IRFZ24N, SSM2602GY, SSM2602Y, SSM2603GY, SSM2603Y, SSM2605GY, SSM2761P-A, SSM3310GH, SSM3310GJ
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