All MOSFET. SSM25T03GJ Datasheet

 

SSM25T03GJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM25T03GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-251

 SSM25T03GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM25T03GJ Datasheet (PDF)

 ..1. Size:744K  silicon standard
 ssm25t03gh ssm25t03gj.pdf

SSM25T03GJ SSM25T03GJ

SSM25T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM25T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 35msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 20AD The SSM25T03GH is in a TO-252 package, which isPb-free; RoHS

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