All MOSFET. SSM25T03GJ Datasheet

 

SSM25T03GJ Datasheet and Replacement


   Type Designator: SSM25T03GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-251
 

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SSM25T03GJ Datasheet (PDF)

 ..1. Size:744K  silicon standard
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SSM25T03GJ

SSM25T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM25T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 35msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 20AD The SSM25T03GH is in a TO-252 package, which isPb-free; RoHS

Datasheet: SSM2309GN , SSM2310GN , SSM2312GN , SSM2313GN , SSM2314GN , SSM2316GN , SSM2318GEN , SSM25T03GH , AON6380 , SSM2602GY , SSM2602Y , SSM2603GY , SSM2603Y , SSM2605GY , SSM2761P-A , SSM3310GH , SSM3310GJ .

History: YJL2312A | RTP315N10F7 | QS8M51 | 25N10L-TF3-T | MME70R380PRH | CS12N65FA9R | IRFP440R

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