SSM25T03GJ Spec and Replacement
Type Designator: SSM25T03GJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 200 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO-251
SSM25T03GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM25T03GJ Specs
ssm25t03gh ssm25t03gj.pdf
SSM25T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM25T03 acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It is RDS(ON) 35m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 20A D The SSM25T03GH is in a TO-252 package, which is Pb-free; RoHS... See More ⇒
Detailed specifications: SSM2309GN , SSM2310GN , SSM2312GN , SSM2313GN , SSM2314GN , SSM2316GN , SSM2318GEN , SSM25T03GH , IRFZ24N , SSM2602GY , SSM2602Y , SSM2603GY , SSM2603Y , SSM2605GY , SSM2761P-A , SSM3310GH , SSM3310GJ .
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