SSM2761P-A MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM2761P-A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220
SSM2761P-A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM2761P-A Datasheet (PDF)
..1. Size:164K silicon standard
ssm2761p-a.pdf
ssm2761p-a.pdf
SSM2761P-AN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS 650VLower On-resistance Fast Switching Characteristic RDS(ON) 1Simple Drive Requirement ID 10AGRoHS Compliant SDESCRIPTION The TO-220 package is universally preferred for all commercial- industrial applications. The device is suited for DC-DC ,AC-DC converters for power applications. G
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