All MOSFET. SSM2761P-A Datasheet

 

SSM2761P-A Datasheet and Replacement


   Type Designator: SSM2761P-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220
 

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SSM2761P-A Datasheet (PDF)

 ..1. Size:164K  silicon standard
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SSM2761P-A

SSM2761P-AN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS 650VLower On-resistance Fast Switching Characteristic RDS(ON) 1Simple Drive Requirement ID 10AGRoHS Compliant SDESCRIPTION The TO-220 package is universally preferred for all commercial- industrial applications. The device is suited for DC-DC ,AC-DC converters for power applications. G

Datasheet: SSM2318GEN , SSM25T03GH , SSM25T03GJ , SSM2602GY , SSM2602Y , SSM2603GY , SSM2603Y , SSM2605GY , IRF730 , SSM3310GH , SSM3310GJ , SSM3J331R , SSM3J338R , SSM3K2615R , SSM3K318R , SSM3K324R , SSM3K335R .

History: AM2329P | SUM110N04-04

Keywords - SSM2761P-A MOSFET datasheet

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